Invention Grant
- Patent Title: Method of wafer bonding
- Patent Title (中): 晶圆接合方法
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Application No.: US12414910Application Date: 2009-03-31
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Publication No.: US08173518B2Publication Date: 2012-05-08
- Inventor: Martin Liu , Alex Hsu , Chung-Yi Yu , Chia-Shiung Tsai
- Applicant: Martin Liu , Alex Hsu , Chung-Yi Yu , Chia-Shiung Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side, a back side, and a first edge portion, forming a material layer over a portion of the front side of the device substrate, trimming the first edge portion, removing the material layer, bonding the front side of the device substrate to a carrier substrate, thinning the device substrate from the back side, and trimming a second edge portion of the thinned device substrate.
Public/Granted literature
- US20100248414A1 METHOD OF WAFER BONDING Public/Granted day:2010-09-30
Information query
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