发明授权
- 专利标题: Non-volatile memory devices and control and operation thereof
- 专利标题(中): 非易失性存储器件及其控制和操作
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申请号: US13035580申请日: 2011-02-25
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公开(公告)号: US08145832B2公开(公告)日: 2012-03-27
- 发明人: Vinod Lakhani , Benjamin Louie
- 申请人: Vinod Lakhani , Benjamin Louie
- 申请人地址: CA Ottawa, Ontario
- 专利权人: Mosaid Technologies Incorporated
- 当前专利权人: Mosaid Technologies Incorporated
- 当前专利权人地址: CA Ottawa, Ontario
- 代理机构: Hamiltion, Brook, Smith & Reynolds, P.C.
- 主分类号: G06F13/00
- IPC分类号: G06F13/00
摘要:
An improved non-volatile erase block memory device apparatus and method is described that incorporates an improved addressing scheme to provide for extended addressing allowing redundant erase blocks that are not utilized to repair general use erase blocks of the main memory array to be accessed and utilized as additional storage space by an end user. The additional storage space formed by the unused redundant erase blocks and the specified storage space of the main memory array is presented to the end user as a single contiguous address space. Additionally, the redundant erase blocks can be utilized to repair any damaged erase block in the memory array of the non-volatile erase block memory or Flash memory device regardless of bank placement.
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