发明授权
- 专利标题： Semiconductor device with amorphous silicon monos memory cell structure and method for manufacturing thereof
- 专利标题（中）： 具有非晶硅单体存储单元结构的半导体器件及其制造方法
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申请号： US12576231申请日： 2009-10-08
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公开(公告)号： US08143666B2公开(公告)日： 2012-03-27
- 发明人: Mieno Fumitake
- 申请人： Mieno Fumitake
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 优先权： CN200610147446 20061223
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A semiconductor device with an amorphous silicon (a-Si) metal-oxide-nitride-oxide-semiconductor (MONOS) memory cell structure. The device includes a substrate, a dielectric layer overlying the substrate, and one or more source or drain regions embedded in the dielectric layer with a co-planar surface of n-type a-Si and the dielectric layer. Additionally, the device includes a p-i-n a-Si diode junction. The device further includes an oxide-nitride-oxide (ONO) charge trapping layer overlying the a-Si p-i-n diode junction and a metal control gate overlying the ONO layer. A method for making the a-Si MONOS memory cell structure is provided and can be repeated to expand the structure three-dimensionally.
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