Invention Grant
- Patent Title: Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing
- Patent Title (中): 在半导体加工中使用的钛或钛合金上形成锌钝化层
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Application No.: US12368110Application Date: 2009-02-09
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Publication No.: US08143164B2Publication Date: 2012-03-27
- Inventor: Bob Kong , Zhi-Wen Sun , Chi-I Lang , Jinhong Tong , Tony Chiang
- Applicant: Bob Kong , Zhi-Wen Sun , Chi-I Lang , Jinhong Tong , Tony Chiang
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.
Public/Granted literature
- US20100203731A1 Formation of a Zinc Passivation Layer on Titanium or Titanium Alloys Used in Semiconductor Processing Public/Granted day:2010-08-12
Information query
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