Invention Grant
- Patent Title: Memory device constructions, memory cell forming methods, and semiconductor construction forming methods
- Patent Title (中): 存储器件结构，存储单元形成方法和半导体构造形成方法
-
Application No.: US12141388Application Date: 2008-06-18
-
Publication No.: US08134137B2Publication Date: 2012-03-13
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Memory device constructions include a first column line extending parallel to a second column line, the first column line being above the second column line; a row line above the second column line and extending perpendicular to the first column line and the second column line; memory material disposed to be selectively and reversibly configured in one of two or more different resistive states; a first diode configured to conduct a first current between the first column line and the row line via the memory material; and a second diode configured to conduct a second current between the second column line and the row line via the memory material. In some embodiments, the first diode is a Schottky diode having a semiconductor anode and a metal cathode and the second diode is a Schottky diode having a metal anode and a semiconductor cathode.
Public/Granted literature
- US20090316467A1 Memory Device Constructions, Memory Cell Forming Methods, and Semiconductor Construction Forming Methods Public/Granted day:2009-12-24
Information query
IPC分类:
