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发明授权
US08119526B2 Method of forming a metal layer and a method of fabricating a semiconductor device 有权
形成金属层的方法和制造半导体器件的方法

Method of forming a metal layer and a method of fabricating a semiconductor device
摘要：
A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer.
摘要（中）：

一种形成金属膜的方法包括制备其上露出由第一金属形成的绝缘层和金属层的基板; 以及通过将第二金属的有机前体供给到所述基板上以同时在所述绝缘层和所述金属层上沉积所述第二金属而形成金属覆盖层，其中所述第二金属覆盖层在所述绝缘层和所述金属层上具有不同的厚度 。

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