Invention Grant
- Patent Title: Method of forming a shallow trench isolation structure having a polysilicon capping layer
- Patent Title (中): 形成具有多晶硅覆盖层的浅沟槽隔离结构的方法
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Application No.: US12058183Application Date: 2008-03-28
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Publication No.: US08119489B2Publication Date: 2012-02-21
- Inventor: Ping-Chia Shih
- Applicant: Ping-Chia Shih
- Applicant Address: TW Science-Based Industrial Park, Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsinchu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/76 ; H01L21/302 ; H01L21/31 ; H01L21/3205
Abstract:
A method of fabricating an isolation structure and the structure thereof is provided. The method is compatible with the embedded memory process and provides the isolation structure with a poly cap thereon to protect the top corners of the isolation structure, without using an extra photomask.
Public/Granted literature
- US20090243030A1 METHOD OF FORMING SHALLOW TRENCH ISOLATION STRUCTURE Public/Granted day:2009-10-01
Information query
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