发明授权
- 专利标题： Method of improving adhesion strength of low dielectric constant layers
- 专利标题（中）： 提高低介电常数层粘附强度的方法
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申请号： US11394529申请日： 2006-03-30
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公开(公告)号： US08110502B2公开(公告)日： 2012-02-07
- 发明人: Ting Cheong Ang
- 申请人： Ting Cheong Ang
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 优先权： CN200510111389 20051212
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
A method for manufacturing a semiconductor device is provided. In a specific embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. Additionally, the method includes forming a dielectric layer overlying the surface region and forming a diffusion barrier layer overlying the dielectric layer. Moreover, the method includes subjecting the diffusion barrier layer to a plasma environment to facilitate adhesion between the diffusion barrier layer and the dielectric layer at an interface region. Also, the method includes processing the semiconductor substrate while maintaining attachment between the dielectric layer and the diffusion barrier layer at the interface region. The subjecting the diffusion barrier layer to a plasma environment includes maintaining a thickness of the barrier diffusion layer.
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