发明授权
US08110417B2 Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device
有权
在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
- 专利标题： Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device
- 专利标题（中）： 在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
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申请号： US12885882申请日： 2010-09-20
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公开(公告)号： US08110417B2公开(公告)日： 2012-02-07
- 发明人: Jong In Yang , Yu Seung Kim , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- 申请人： Jong In Yang , Yu Seung Kim , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- 申请人地址： KR Gyunggi-do
- 专利权人： Samsung LED Co., Ltd.
- 当前专利权人： Samsung LED Co., Ltd.
- 当前专利权人地址： KR Gyunggi-do
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2008-0101586 20081016
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
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