发明授权
US08110414B2 Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodes
有权
使用金属绝缘体金属电容器形成集成电路器件，使用顶部电极的选择性蚀刻
- 专利标题： Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodes
- 专利标题（中）： 使用金属绝缘体金属电容器形成集成电路器件，使用顶部电极的选择性蚀刻
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申请号： US12433042申请日： 2009-04-30
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公开(公告)号： US08110414B2公开(公告)日： 2012-02-07
- 发明人: Marshall O. Cathey, Jr. , Pushpa Mahalingam , Weidong Tian , David C. Guiling , Xinfen Chen , Binghua Hu , Sopa Chevacharoenkul
- 申请人： Marshall O. Cathey, Jr. , Pushpa Mahalingam , Weidong Tian , David C. Guiling , Xinfen Chen , Binghua Hu , Sopa Chevacharoenkul
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 John R. Pessertto; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H01L31/26
- IPC分类号： H01L31/26 ; H01L21/66
摘要：
A method of forming integrated circuits (IC) having at least one metal insulator metal (MIM) capacitor. A bottom electrode is formed on a predetermined region of a semiconductor surface of a substrate. At least one dielectric layer including silicon is formed on the bottom electrode, wherein a thickness of the dielectric layer is
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