发明授权
- 专利标题： Magnetoresistive sensor with novel pinned layer structure
- 专利标题（中）： 具有新型钉扎层结构的磁阻传感器
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申请号： US12345733申请日： 2008-12-30
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公开(公告)号： US08107202B2公开(公告)日： 2012-01-31
- 发明人: Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
- 申请人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
- 申请人地址： NL Amsterdam
- 专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址： NL Amsterdam
- 代理机构： Zilka-Kotab, PC
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
公开/授权文献
- US20090257152A1 MAGNETORESISTIVE SENSOR WITH HIGH TMR AND LOW RA 公开/授权日：2009-10-15
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