发明授权
- 专利标题： Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure
- 专利标题（中）： 包括多过渡金属掺杂I型包合物晶体结构的热电材料
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申请号： US12434333申请日： 2009-05-01
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公开(公告)号： US08097802B2公开(公告)日： 2012-01-17
- 发明人: Jihui Yang , Xun Shi , Shengqiang Bai , Wenqing Zhang , Lidong Chen , Jiong Yang
- 申请人： Jihui Yang , Xun Shi , Shengqiang Bai , Wenqing Zhang , Lidong Chen , Jiong Yang
- 申请人地址： US MI Detroit
- 专利权人： GM Global Technology Operations LLC
- 当前专利权人： GM Global Technology Operations LLC
- 当前专利权人地址： US MI Detroit
- 代理机构： Dierker & Associates, P.C.
- 主分类号： H01L35/12
- IPC分类号： H01L35/12 ; H01L35/00 ; H01B1/02 ; H01L35/30
摘要：
A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA−|Δq1|y1−|Δq2|y2− . . . −|Δqn|yn, wherein qA is a charge state of A, and wherein Δq1, Δq2, Δqn are, respectively, the nominal charge state of the first, second, and n-th TM.
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