Invention Grant
- Patent Title: Hybrid organic light-emitting transistor device and manufacturing method thereof
- Patent Title (中): 混合有机发光晶体管器件及其制造方法
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Application No.: US12450462Application Date: 2008-01-30
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Publication No.: US08093586B2Publication Date: 2012-01-10
- Inventor: Noriyuki Shimoji , Suguru Okuyama , Yoshiaki Oku
- Applicant: Noriyuki Shimoji , Suguru Okuyama , Yoshiaki Oku
- Applicant Address: JP Tokyo JP Kyoto
- Assignee: Pioneer Corporation,Rohm Co., Ltd.
- Current Assignee: Pioneer Corporation,Rohm Co., Ltd.
- Current Assignee Address: JP Tokyo JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2007-091899 20070330
- International Application: PCT/JP2008/051357 WO 20080130
- International Announcement: WO2008/126449 WO 20081023
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00 ; H01L29/04 ; H01L27/15 ; H01L33/00

Abstract:
A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.
Public/Granted literature
- US20100065831A1 HYBRID ORGANIC LIGHT-EMITTING TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-03-18
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