发明授权
- 专利标题： Patterning of nanostructures
- 专利标题（中）： 纳米结构图案化
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申请号： US10444176申请日： 2003-05-23
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公开(公告)号： US08093144B2公开(公告)日： 2012-01-10
- 发明人: Joseph M. Jacobson , David Kong , Vikas Anant , Ashley Salomon , Saul Griffith , Will DelHagen , Vikrant Agnihotri
- 申请人： Joseph M. Jacobson , David Kong , Vikas Anant , Ashley Salomon , Saul Griffith , Will DelHagen , Vikrant Agnihotri
- 申请人地址： US MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： US MA Cambridge
- 代理商 Norma E. Henderson
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A technique for forming nanostructures including a definition of a charge pattern on a substrate and introduction of charged molecular scale sized building blocks (MSSBBs) to a region proximate the charge pattern so that the MSSBBs adhere to the charge pattern to form the feature.
公开/授权文献
- US20040033679A1 Patterning of nanostructures 公开/授权日：2004-02-19
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