发明授权
- 专利标题： Resistance-change memory device
- 专利标题（中）： 电阻变化存储器件
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申请号： US12629660申请日： 2009-12-02
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公开(公告)号： US08072789B2公开(公告)日： 2011-12-06
- 发明人: Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
- 申请人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： K&L Gates LLP
- 优先权： JP2008-309039 20081203
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/22 ; G11C11/14 ; G11C11/04
摘要：
A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.
公开/授权文献
- US20100135068A1 RESISTANCE-CHANGE MEMORY DEVICE 公开/授权日：2010-06-03
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