发明授权
- 专利标题: Semiconductor device having elongated electrostatic protection element along long side of semiconductor chip
- 专利标题(中): 具有沿着半导体芯片长边的细长静电保护元件的半导体器件
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申请号: US12068188申请日: 2008-02-04
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公开(公告)号: US08072033B2公开(公告)日: 2011-12-06
- 发明人: Nobuyuki Kobayashi
- 申请人: Nobuyuki Kobayashi
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2007-046382 20070227
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
An electrostatic protection element is disposed commonly to a plurality of output circuits along a long side of an output circuit region. More preferably, the electrostatic protection element should be disposed between a Pch region and an Nch region of an output circuit.
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