- Patent Title: Logic circuits, inverter devices and methods of operating the same
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Application No.: US12926475Application Date: 2010-11-19
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Publication No.: US08058907B2Publication Date: 2011-11-15
- Inventor: Huaxiang Yin , Youngsoo Park , Jaechul Park , Sunil Kim
- Applicant: Huaxiang Yin , Youngsoo Park , Jaechul Park , Sunil Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0057488 20080618
- Main IPC: H03K19/20
- IPC: H03K19/20 ; H03K19/094
Abstract:
An inverter device includes at least a first transistor connected between a power source node and ground. The first transistor includes a first gate and a first terminal that are internally capacitive-coupled to control a boost voltage at a boost node. The first terminal is one of a first source and a first drain of the first transistor.
Public/Granted literature
- US20110089998A1 Logic circuits, inverter devices and methods of operating the same Public/Granted day:2011-04-21
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