发明授权
US08017489B2 Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed
有权
场效应结构包括碳合金通道区和源极/漏极区不是碳合金化
- 专利标题： Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed
- 专利标题（中）： 场效应结构包括碳合金通道区和源极/漏极区不是碳合金化
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申请号： US12047355申请日： 2008-03-13
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公开(公告)号： US08017489B2公开(公告)日： 2011-09-13
- 发明人: William F. Clark, Jr. , Ephrem G. Gebgreselasie , Xuefeng Liu , Robert Russell Robison
- 申请人： William F. Clark, Jr. , Ephrem G. Gebgreselasie , Xuefeng Liu , Robert Russell Robison
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Richard M. Kotulak, Esq.
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device structure. The field effect device structure includes a gate electrode located over a channel region within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. The channel region includes a surface layer that comprises a carbon doped semiconductor material. The source and drain regions include a surface layer that comprises a semiconductor material that is not carbon doped. The particular selection of material for the channel region and source and drain regions provide for inhibited dopant diffusion and enhanced mechanical stress within the channel region, and thus enhanced performance of the field effect device.
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