Invention Grant
US08013359B2 Optically controlled electrical switching device based on wide bandgap semiconductors 有权
基于宽带隙半导体的光控电气开关器件

  • Patent Title: Optically controlled electrical switching device based on wide bandgap semiconductors
  • Patent Title (中): 基于宽带隙半导体的光控电气开关器件
  • Application No.: US11024410
    Application Date: 2004-12-30
  • Publication No.: US08013359B2
    Publication Date: 2011-09-06
  • Inventor: John W. Pettit
  • Applicant: John W. Pettit
  • Applicant Address: US MD Rockville
  • Assignee: John W. Pettit
  • Current Assignee: John W. Pettit
  • Current Assignee Address: US MD Rockville
  • Agency: Blank Rome LLP
  • Main IPC: H01L31/111
  • IPC: H01L31/111
Optically controlled electrical switching device based on wide bandgap semiconductors
Abstract:
A power switching device includes an optically controlled component using a semiconducting carbon nanotube. An optical signal transmitted over an optical fiber controls the conductivity of the nanotube. The nanotube transmits a signal controlled by the optical signal to a wide-bandgap semiconductor power switch, which switches the power.
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/08 .其中的辐射控制通过该器件的电流的,例如光敏电阻器
H01L31/10 ..特点在于至少有一个电位跃变势垒或表面势垒的,例如光敏晶体管
H01L31/101 ...对红外、可见或紫外辐射敏感的器件
H01L31/111 ....以至少3个势垒为特征的,如光敏晶体闸流管
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