Invention Grant
- Patent Title: Method of fabricating an integrated CMOS-MEMS device
- Patent Title (中): 制造集成CMOS-MEMS器件的方法
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Application No.: US12429305Application Date: 2009-04-24
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Publication No.: US08012785B2Publication Date: 2011-09-06
- Inventor: Kai-Chih Liang , Hua-Shu Wu , Li-Chun Peng , Tsung-Cheng Huang , Mingo Liu , Nick Y. M. Shen , Allen Timothy Chang
- Applicant: Kai-Chih Liang , Hua-Shu Wu , Li-Chun Peng , Tsung-Cheng Huang , Mingo Liu , Nick Y. M. Shen , Allen Timothy Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/14

Abstract:
An embodiment of a method is provided that includes providing a substrate having a frontside and a backside. A CMOS device is formed on the substrate. A MEMS device is also formed on the substrate. Forming the MEMS device includes forming a MEMS mechanical structure on the frontside of the substrate. The MEMS mechanical structure is then released. A protective layer is formed on the frontside of the substrate. The protective layer is disposed on the released MEMS mechanical structure (e.g., protects the MEMS structure). The backside of the substrate is processed while the protective layer is disposed on the MEMS mechanical structure.
Public/Granted literature
- US20100273286A1 Method Of Fabricating An Integrated CMOS-MEMS Device Public/Granted day:2010-10-28
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