Invention Grant
US08012785B2 Method of fabricating an integrated CMOS-MEMS device 有权
制造集成CMOS-MEMS器件的方法

Method of fabricating an integrated CMOS-MEMS device
Abstract:
An embodiment of a method is provided that includes providing a substrate having a frontside and a backside. A CMOS device is formed on the substrate. A MEMS device is also formed on the substrate. Forming the MEMS device includes forming a MEMS mechanical structure on the frontside of the substrate. The MEMS mechanical structure is then released. A protective layer is formed on the frontside of the substrate. The protective layer is disposed on the released MEMS mechanical structure (e.g., protects the MEMS structure). The backside of the substrate is processed while the protective layer is disposed on the MEMS mechanical structure.
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