发明授权
- 专利标题： Light-emitting diode with increased light extraction
- 专利标题（中）： 发光二极管具有增加的光提取
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申请号： US12173662申请日： 2008-07-15
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公开(公告)号： US08008678B2公开(公告)日： 2011-08-30
- 发明人: Chuong Anh Tran , Trung Tri Doan
- 申请人： Chuong Anh Tran , Trung Tri Doan
- 申请人地址： US CA Milpitas
- 专利权人： Semileds Corporation
- 当前专利权人： Semileds Corporation
- 当前专利权人地址： US CA Milpitas
- 代理机构： Patterson & Sheridan, L.L.P.
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
公开/授权文献
- US20090014743A1 METHOD OF MAKING A LIGHT-EMITTING DIODE 公开/授权日：2009-01-15
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