发明授权
- 专利标题： LDMOS transistor
- 专利标题（中）： LDMOS晶体管
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申请号： US11995087申请日： 2006-07-10
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公开(公告)号： US07989879B2公开(公告)日： 2011-08-02
- 发明人: Freerk Van Rijs , Stephan J. C. H. Theeuwen , Petra C. A. Hammes
- 申请人： Freerk Van Rijs , Stephan J. C. H. Theeuwen , Petra C. A. Hammes
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP05106422 20050713
- 国际申请： PCT/IB2006/052325 WO 20060710
- 国际公布： WO2007/007273 WO 20070118
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The LDMOS transistor (1) of the invention comprises a source region (3), a channel region (4), a drain extension region (7) and a gate electrode (10). The LDMOS transistor (1) further comprises a first gate oxide layer (8) and a second gate oxide layer (9), which is thicker than the first gate oxide layer (8). The first gate oxide layer (8) at least extends over a first portion of the channel region (4), which is adjacent to the source region (3). The second gate oxide layer (9) extends over a region where a local maximum (A, B) of the electric field (E) generates hot carriers thereby reducing the impact of the hot carriers and reducing the Idq-degradation. In another embodiment the second gate oxide layer (9) extends over a second portion of the channel region (4), which mutually connects the drain extension region (7) and the first portion of the channel region (4), thereby improving the linear efficiency of the LDMOS transistor (1).
公开/授权文献
- US20090218622A1 LDMOS TRANSISTOR 公开/授权日：2009-09-03
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