发明授权
- 专利标题: Pattern inspection apparatus and semiconductor inspection system
- 专利标题(中): 图案检验仪器和半导体检测系统
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申请号: US11834218申请日: 2007-08-06
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公开(公告)号: US07978904B2公开(公告)日: 2011-07-12
- 发明人: Yasutaka Toyoda , Takumichi Sutani , Ryoichi Matsuoka , Hidemitsu Naya
- 申请人: Yasutaka Toyoda , Takumichi Sutani , Ryoichi Matsuoka , Hidemitsu Naya
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 优先权: JP2006-220926 20060814
- 主分类号: G06K9/00
- IPC分类号: G06K9/00 ; G06K9/48
摘要:
There is provided a pattern inspection apparatus that is capable of detecting a defect accurately and efficiently to inspect a pattern of a semiconductor device. The pattern inspection apparatus includes: a contour extraction means for extracting contour data of a pattern from a captured image of the semiconductor device; a non-linear part extraction means for extracting a non-linear part from the contour data; an angular part extraction means for extracting an angular part of a pattern from design data of the semiconductor device; and a defect detection section that compares a position of the non-linear part extracted by the non-linear part extraction section with a position of the angular part extracted by the angular part extraction section so as to detect a position of a defective part of a pattern.
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