发明授权
US07978535B2 Data input/output circuit and method of semiconductor memory apparatus
有权
半导体存储装置的数据输入/输出电路和方法
- 专利标题: Data input/output circuit and method of semiconductor memory apparatus
- 专利标题(中): 半导体存储装置的数据输入/输出电路和方法
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申请号: US12722734申请日: 2010-03-12
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公开(公告)号: US07978535B2公开(公告)日: 2011-07-12
- 发明人: Seung-Lo Kim
- 申请人: Seung-Lo Kim
- 申请人地址: KR Gyeonggi-do
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Venable LLP
- 代理商 Jeffri A. Kaminski
- 优先权: KR10-2006-0011781 20060207
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
A first timing control unit controls an active timing of a first control signal to output a first driving control signal. A first data input/output unit transmits write data from a data input/output buffer to a global input/output line or transmits read data from the global input/output line to the data input/output buffer, in response to the first driving control signal. A second timing control unit controls an active timing of a second control signal to output a second driving control signal. A second data input/output unit transmits the write data from the global input/output line to a local input/output line or transmits the read data from the local input/output line to the global input/output line, in response to the second driving control signal.
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