发明授权
US07978535B2 Data input/output circuit and method of semiconductor memory apparatus 有权
半导体存储装置的数据输入/输出电路和方法

  • 专利标题: Data input/output circuit and method of semiconductor memory apparatus
  • 专利标题(中): 半导体存储装置的数据输入/输出电路和方法
  • 申请号: US12722734
    申请日: 2010-03-12
  • 公开(公告)号: US07978535B2
    公开(公告)日: 2011-07-12
  • 发明人: Seung-Lo Kim
  • 申请人: Seung-Lo Kim
  • 申请人地址: KR Gyeonggi-do
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 当前专利权人地址: KR Gyeonggi-do
  • 代理机构: Venable LLP
  • 代理商 Jeffri A. Kaminski
  • 优先权: KR10-2006-0011781 20060207
  • 主分类号: G11C7/10
  • IPC分类号: G11C7/10
Data input/output circuit and method of semiconductor memory apparatus
摘要:
A first timing control unit controls an active timing of a first control signal to output a first driving control signal. A first data input/output unit transmits write data from a data input/output buffer to a global input/output line or transmits read data from the global input/output line to the data input/output buffer, in response to the first driving control signal. A second timing control unit controls an active timing of a second control signal to output a second driving control signal. A second data input/output unit transmits the write data from the global input/output line to a local input/output line or transmits the read data from the local input/output line to the global input/output line, in response to the second driving control signal.
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