发明授权
US07978442B2 CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
有权
CPP装置,其在限制电流路径(CCP)间隔件中具有多个金属氧化物模板
- 专利标题: CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
- 专利标题(中): CPP装置,其在限制电流路径(CCP)间隔件中具有多个金属氧化物模板
-
申请号: US11906716申请日: 2007-10-03
-
公开(公告)号: US07978442B2公开(公告)日: 2011-07-12
- 发明人: Kunliang Zhang , Min Li , Yue Liu , Hideaki Fukuzawa , Hiromi Yuasa
- 申请人: Kunliang Zhang , Min Li , Yue Liu , Hideaki Fukuzawa , Hiromi Yuasa
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: TDK Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人: TDK Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号: G11B5/39
- IPC分类号: G11B5/39
摘要:
A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.
公开/授权文献
- US20090091865A1 CPP device with uniformity improvements 公开/授权日:2009-04-09
信息查询
IPC分类: