知搜-全球专利检索

  1. 登录
  2. 注册
发明授权
US07977850B2 Bulk acoustic wave device with a semiconductor layer 失效
具有半导体层的体声波器件

Bulk acoustic wave device with a semiconductor layer
摘要：
A bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes and a semiconductor layer arranged between the first and second electrodes. The semiconductor layer is electrically isolated from the first electrode.
摘要（中）：

体声波装置包括第一电极，第二电极，布置在第一和第二电极之间的压电层和布置在第一和第二电极之间的半导体层。 半导体层与第一电极电隔离。

公开/授权文献
信息查询
Espacenet
0/0