发明授权
- 专利标题： Semiconductor storage device using magnetoresistive effect element and method of manufacturing the same
- 专利标题（中）： 使用磁阻效应元件的半导体存储装置及其制造方法
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申请号： US12400465申请日： 2009-03-09
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公开(公告)号： US07977756B2公开(公告)日： 2011-07-12
- 发明人: Masaki Aoki
- 申请人： Masaki Aoki
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2008-059134 20080310
- 主分类号： H01L27/14
- IPC分类号： H01L27/14 ; G11C11/44
摘要：
A semiconductor storage device includes a semiconductor substrate, a source region, a source line, and a bit line. The source region is formed in an element region formed on the semiconductor substrate. The source line is formed to overlap with the source region in planar view. The bit line is formed on a layer higher than the source line.
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