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发明授权
US07977725B2 Integrated circuit semiconductor device including stacked level transistors 有权
集成电路半导体器件，包括层叠晶体管

Integrated circuit semiconductor device including stacked level transistors
摘要：
An integrated circuit semiconductor device includes a first transistor formed at a lower substrate and configured with at least one of a vertical transistor and a planar transistor. A bonding insulation layer is formed on the first transistor, and an upper substrate is bonded on the bonding insulation layer. A second transistor configured with at least one of a vertical transistor and a planar transistor is formed at the upper substrate. The first transistor and the second transistor are connected by an interconnection layer.
摘要（中）：

集成电路半导体器件包括形成在下基板处并配置有垂直晶体管和平面晶体管中的至少一个的第一晶体管。 在第一晶体管上形成接合绝缘层，并且在接合绝缘层上接合上基板。 在上基板上形成配置有垂直晶体管和平面晶体管中的至少一个的第二晶体管。 第一晶体管和第二晶体管通过互连层连接。

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