发明授权
- 专利标题： Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit
- 专利标题（中）： 掩埋栅极半导体器件及相应集成电路的制造方法
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申请号： US12372415申请日： 2009-02-17
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公开(公告)号： US07977187B2公开(公告)日： 2011-07-12
- 发明人: Emilie Bernard , Bernard Guillaumot , Philippe Coronel
- 申请人： Emilie Bernard , Bernard Guillaumot , Philippe Coronel
- 申请人地址： FR Crolles Cedex FR Montrouge
- 专利权人： STMicroelectronics (Crolles 2) SAS,STMicroelectronics S.A.
- 当前专利权人： STMicroelectronics (Crolles 2) SAS,STMicroelectronics S.A.
- 当前专利权人地址： FR Crolles Cedex FR Montrouge
- 代理机构： Gardere Wynne & Sewell LLP
- 代理商 Andre M. Szuwalski
- 优先权： FR0851266 20080227
- 主分类号： H01L29/772
- IPC分类号： H01L29/772
摘要：
A semiconductor device includes a semiconductive channel region and a gate region. The gate region has at least one buried part extending under the channel region. The buried part of the gate region is formed by forming a cavity under the channel region. That cavity is at least partial filled with silicon and a metal. An annealing step is performed so as to form a silicide of said metal in the cavity. The result is a totally silicided buried gate for the semiconductor device.
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