发明授权
- 专利标题: Silicon thin film transistors, systems, and methods of making same
- 专利标题(中): 硅薄膜晶体管,系统及其制造方法
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申请号: US12359929申请日: 2009-01-26
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公开(公告)号: US07977173B2公开(公告)日: 2011-07-12
- 发明人: John M. Heitzinger , John Snyder
- 申请人: John M. Heitzinger , John Snyder
- 申请人地址: US MN Savage
- 专利权人: Soligie, Inc.
- 当前专利权人: Soligie, Inc.
- 当前专利权人地址: US MN Savage
- 代理机构: Patterson Thuente Christensen Pedersen, P.A.
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
Systems and methods of fabricating silicon-based thin film transistors (TFTs) on flexible substrates. The systems and methods incorporate and combine deposition processes such as chemical vapor deposition and plasma-enhance vapor deposition, printing, coating, and other deposition processes, with laser annealing, etching techniques, and laser doping, all performed at low temperatures such that the precision, resolution, and registration is achieved to produce a high performing transistor. Such TFTs can be used in applications such as displays, packaging, labeling, and the like.
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