Invention Grant
- Patent Title: Method of programming nonvolatile memory device
- Patent Title (中): 非易失性存储器件编程方法
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Application No.: US12361231Application Date: 2009-01-28
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Publication No.: US07969786B2Publication Date: 2011-06-28
- Inventor: Jong Hyun Wang
- Applicant: Jong Hyun Wang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0066876 20080710
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method of programming nonvolatile memory devices. A program operation is performed by applying a dummy program pulse having a pulse width wider than a pulse width of a program start pulse. A program operation is performed by applying the program start pulse. It is then verified whether a program has been completed as a result of the program operation. A program operation is performed by applying a step-shaped dummy program pulse, which has a second pulse width and has been increased by a second step voltage. A program operation is performed by applying a program pulse having a first step voltage and a first pulse width. It is then verified whether a program has been completed as a result of the program operation.
Public/Granted literature
- US20100008145A1 METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE Public/Granted day:2010-01-14
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