发明授权
- 专利标题： Bidirectional electrostatic discharge protection structure for high voltage applications
- 专利标题（中）： 双向静电放电保护结构，适用于高压应用
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申请号： US12563610申请日： 2009-09-21
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公开(公告)号： US07968908B2公开(公告)日： 2011-06-28
- 发明人: Michel J. Abou-Khalil , Robert Gauthier , Junjun Li
- 申请人： Michel J. Abou-Khalil , Robert Gauthier , Junjun Li
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Anthony J. Canale
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
Semiconductor structures providing protection against electrostatic events of both polarities are provided. A pair of p-n junctions is provided underneath a shallow trench isolation portion between a first-conductivity-type well and each of a signal-side second-conductivity-type well and an electrical-ground-side second-conductivity-type well in a semiconductor substrate. A second-conductivity-type doped region and a first-conductivity-type doped region are formed above each second-conductivity-type well such that a portion of the second-conductivity-type well resistively separates the second-conductivity-type doped region and the first-conductivity-type doped region within the semiconductor substrate. Each of the second-conductivity-type doped regions is wired either to a signal node or electrical ground. One of the two npn transistors and one of the two p-n diodes, each inherently present in the semiconductor structure, turn on to provide protection against electrical discharge events involving either type of excessive electrical charges.
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