发明授权
- 专利标题： Semiconductor device and manufacturing method of the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US12894609申请日： 2010-09-30
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公开(公告)号： US07944024B2公开(公告)日： 2011-05-17
- 发明人: Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
- 申请人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2004-292598 20041005
- 主分类号： H01L31/117
- IPC分类号： H01L31/117
摘要：
A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer.
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