Invention Grant
- Patent Title: Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
- Patent Title (中): 适用于电路集成的旋转电流开关磁存储元件和制造存储元件的方法
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Application No.: US12548428Application Date: 2009-08-27
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Publication No.: US07943399B2Publication Date: 2011-05-17
- Inventor: Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
- Applicant: Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
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