发明授权
- 专利标题： Operation of a non-volatile memory array
- 专利标题（中）： 非易失性存储器阵列的操作
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申请号： US12292240申请日： 2008-11-14
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公开(公告)号： US07924628B2公开(公告)日： 2011-04-12
- 发明人: Kobi Danon , Shai Eisen , Marcelo Krygier
- 申请人： Kobi Danon , Shai Eisen , Marcelo Krygier
- 申请人地址： IL Netanya
- 专利权人： Spansion Israel Ltd
- 当前专利权人： Spansion Israel Ltd
- 当前专利权人地址： IL Netanya
- 代理机构： Eitan Mehulal Law Group
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/06 ; G11C7/10
摘要：
A cache programming operation which requires 2 SRAMs (one for the user and one for the array) may be combined with a multi-level cell (MLC) programming operation which also requires 2 SRAMs (one for caching the data and one for verifying the data), using only a total of two SRAMs (or buffers). One of the buffers (User SRAM) receives and stores user data. The other of the two buffers (Cache SRAM) may perform a caching function as well as a verify function. In this manner, if a program operation fails, the user can have its original data back so that he can try to reprogram it to a different place (address).
公开/授权文献
- US20090122610A1 Operation of a non-volatile memory array 公开/授权日：2009-05-14
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