发明授权
US07923719B2 Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer
有权
半导体存储器件，其中通过有机化合物层中的开口制造布线接触
- 专利标题： Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer
- 专利标题（中）： 半导体存储器件，其中通过有机化合物层中的开口制造布线接触
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申请号： US11790348申请日： 2007-04-25
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公开(公告)号： US07923719B2公开(公告)日： 2011-04-12
- 发明人: Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
- 申请人： Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2006-127124 20060428
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L51/40 ; H01L21/8242
摘要：
In the present invention, a semiconductor device that has a nonvolatile memory element to which data can be written at times other than during manufacture and in which forgery and the like performed by rewriting of data can be prevented is provided. In addition, a semiconductor device in which a high level of integration is possible is provided. Furthermore, a semiconductor device in which miniaturization is possible is provided. In a semiconductor device having a memory element that includes a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer; the second conductive layer is connected to a wiring, formed in the same way as the first conductive layer is formed, through an opening formed in the organic compound layer.
公开/授权文献
- US20070254432A1 Semiconductor device and manufacturing method thereof 公开/授权日：2007-11-01
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