发明授权
- 专利标题: Charged particle beam writing method
- 专利标题(中): 带电粒子束写入方式
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申请号: US12137146申请日: 2008-06-11
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公开(公告)号: US07923704B2公开(公告)日: 2011-04-12
- 发明人: Hitoshi Sunaoshi
- 申请人: Hitoshi Sunaoshi
- 申请人地址: JP Numazu-shi
- 专利权人: NuFlare Technology, Inc.
- 当前专利权人: NuFlare Technology, Inc.
- 当前专利权人地址: JP Numazu-shi
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-168518 20070627
- 主分类号: G21K5/00
- IPC分类号: G21K5/00
摘要:
A charged particle beam writing method includes writing a pattern on a first target object by using a charged particle beam in a writing apparatus; and conveying a second target object after having written the pattern on the first target object, wherein even though the second target object is arranged on any one of conveying paths including a carry-out port and a carry-in port of the writing apparatus, a conveying operation for the second target object is not performed during writing the pattern on the first target object.
公开/授权文献
- US20090001293A1 CHARGED PARTICLE BEAM WRITING METHOD 公开/授权日:2009-01-01
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