发明授权
- 专利标题: Developing device and developing method
- 专利标题(中): 开发设备和开发方法
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申请号: US10584265申请日: 2004-12-24
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公开(公告)号: US07918182B2公开(公告)日: 2011-04-05
- 发明人: Taro Yamamoto , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
- 申请人: Taro Yamamoto , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
- 申请人地址: JP Tokyo-To
- 专利权人: Tokyo Electronic Limited
- 当前专利权人: Tokyo Electronic Limited
- 当前专利权人地址: JP Tokyo-To
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2003-435894 20031226
- 国际申请: PCT/JP2004/019415 WO 20041224
- 国际公布: WO2005/064655 WO 20050714
- 主分类号: B05C11/10
- IPC分类号: B05C11/10
摘要:
The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
公开/授权文献
- US20070184178A1 Developing device and developing method 公开/授权日:2007-08-09
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