发明授权
- 专利标题： ZnO-based thin film transistor and method of manufacturing the same
- 专利标题（中）： ZnO系薄膜晶体管及其制造方法
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申请号： US12615315申请日： 2009-11-10
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公开(公告)号： US07915610B2公开(公告)日： 2011-03-29
- 发明人: Myung-kwan Ryu , Jun-seong Kim , Sang-yoon Lee , Euk-che Hwang , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
- 申请人： Myung-kwan Ryu , Jun-seong Kim , Sang-yoon Lee , Euk-che Hwang , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2007-0048310 20070517
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
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