Voltage-controlled semiconductor structure, resistor, and manufacturing processes thereof

发明授权

US07911031B2 Voltage-controlled semiconductor structure, resistor, and manufacturing processes thereof 有权

标题翻译：电压控制半导体结构，电阻及其制造方法

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专利标题： Voltage-controlled semiconductor structure, resistor, and manufacturing processes thereof
专利标题（中）： 电压控制半导体结构，电阻及其制造方法
申请号： US11507293

申请日： 2006-08-21
公开(公告)号： US07911031B2

公开(公告)日： 2011-03-22
发明人: Chiu-Chih Chiang , Chih-Feng Huang
申请人： Chiu-Chih Chiang , Chih-Feng Huang
申请人地址： TW Taipei
专利权人： System General Corporation
当前专利权人： System General Corporation
当前专利权人地址： TW Taipei
主分类号： H01L29/8605
IPC分类号： H01L29/8605

Voltage-controlled semiconductor structure, resistor, and manufacturing processes thereof

摘要：

Voltage-controlled semiconductor structures, voltage-controlled resistors, and manufacturing processes are provided. The semiconductor structure comprises a substrate, a first doped well, and a second doped well. The substrate is doped with a first type of ions. The first doped well is with a second type of ions and is formed in the substrate. The second doped well is with the second type of ions and is formed in the substrate. The first type of ions and the second type of ions are complementary. A resistor is formed between the first doped well and the second doped well. A resistivity of the resistor is controlled by a differential voltage. A resistivity of the resistor relates to a first depth of the first doped well, a second depth of the second doped well, and a distance between the first doped well and the second doped well. The resistivity of the resistor is higher than that of a well resistor formed in a single doped well with the second type of ions.

摘要（中）：

提供了压控半导体结构，压控电阻器和制造工艺。半导体结构包括衬底，第一掺杂阱和第二掺杂阱。衬底掺杂有第一类型的离子。第一掺杂阱具有第二类离子，并形成在衬底中。第二掺杂阱是与第二类型的离子形成在衬底中。第一类离子和第二类离子是互补的。在第一掺杂阱和第二掺杂阱之间形成电阻器。电阻的电阻率由差分电压控制。电阻器的电阻率涉及第一掺杂阱的第一深度，第二掺杂阱的第二深度以及第一掺杂阱和第二掺杂阱之间的距离。电阻器的电阻率高于在具有第二类型离子的单个掺杂阱中形成的阱电阻器的电阻率。

公开/授权文献

US20080042241A1 Voltage-controlled semiconductor structure, resistor, and manufacturing processes thereof 公开/授权日：2008-02-21

信息查询

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/8605	...带有PN结的电阻器