发明授权
- 专利标题： Semiconductor device and method of manufacturing a semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12496133申请日： 2009-07-01
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公开(公告)号： US07910996B2公开(公告)日： 2011-03-22
- 发明人: Paul R. Besser , Scott D. Luning
- 申请人： Paul R. Besser , Scott D. Luning
- 专利权人： Globalfoundries Inc.
- 当前专利权人： Globalfoundries Inc.
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
A semiconductor device is disclosed having a conductive gate structure overlying a semiconductor layer having a major surface. An isolation material is recessed within a trench region below the major surface of the semiconductor layer. An epitaxial layer is formed overlying a portion of the major surface and on an active region forming a sidewall of the trench.
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