发明授权
- 专利标题： Semiconductor device and method for manufacturing same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12355591申请日： 2009-01-16
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公开(公告)号： US07910984B2公开(公告)日： 2011-03-22
- 发明人: Yoshihiro Yamaguchi , Yusuke Kawaguchi , Miwako Akiyama
- 申请人： Yoshihiro Yamaguchi , Yusuke Kawaguchi , Miwako Akiyama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JP2008-008782 20080118
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor device includes: a semiconductor substrate; a lateral MOSFET formed in an upper portion of a first region of the semiconductor substrate; a vertical MOSFET formed in a second region of the semiconductor substrate; a backside electrode formed on a lower surface of the semiconductor substrate and connected to a lower region of source/drain regions of the vertical MOSFET; and a connecting member penetrating the semiconductor substrate and connecting one of source/drain regions of the lateral MOSFET to the backside electrode.
公开/授权文献
- US20090184352A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 公开/授权日：2009-07-23
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