发明授权
US07888779B2 Method of fabrication InGaAIN film and light-emitting device on a silicon substrate
有权
在硅衬底上制造InGaFET膜和发光器件的方法
- 专利标题： Method of fabrication InGaAIN film and light-emitting device on a silicon substrate
- 专利标题（中）： 在硅衬底上制造InGaFET膜和发光器件的方法
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申请号： US11910735申请日： 2006-04-14
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公开(公告)号： US07888779B2公开(公告)日： 2011-02-15
- 发明人: Fengyi Jiang , Wenqing Fang , Li Wang , Chunlan Mo , Hechu Liu , Maoxing Zhou
- 申请人： Fengyi Jiang , Wenqing Fang , Li Wang , Chunlan Mo , Hechu Liu , Maoxing Zhou
- 申请人地址： CN Nanchang
- 专利权人： Lattice Power (Jiangxi) Corporation
- 当前专利权人： Lattice Power (Jiangxi) Corporation
- 当前专利权人地址： CN Nanchang
- 代理机构： Park, Vaughan, Fleming & Dowler LLP
- 代理商 Shun Yao
- 优先权： CN200510025179 20050415
- 国际申请： PCT/CN2006/000681 WO 20060414
- 国际公布： WO2006/108359 WO 20061019
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/203
摘要：
There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.
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