发明授权
- 专利标题: Pixel structure for a solid state light emitting device
- 专利标题(中): 用于固态发光器件的像素结构
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申请号: US12015285申请日: 2008-01-16
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公开(公告)号: US07888686B2公开(公告)日: 2011-02-15
- 发明人: George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
- 申请人: George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
- 申请人地址: CA Kanata, Ontario
- 专利权人: Group IV Semiconductor Inc.
- 当前专利权人: Group IV Semiconductor Inc.
- 当前专利权人地址: CA Kanata, Ontario
- 代理机构: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/06
摘要:
A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
公开/授权文献
- US20080246046A1 Pixel Structure For A Solid State Light Emitting Device 公开/授权日:2008-10-09
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