发明授权
- 专利标题： Electrostatic breakdown protection circuit and semiconductor integrated circuit device therewith
- 专利标题（中）： 静电击穿保护电路及半导体集成电路装置
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申请号： US11912412申请日： 2006-12-05
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公开(公告)号： US07859805B2公开(公告)日： 2010-12-28
- 发明人: Masanori Tsuchihashi
- 申请人： Masanori Tsuchihashi
- 申请人地址： JP Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2005-353163 20051207
- 国际申请： PCT/JP2006/324193 WO 20061205
- 国际公布： WO2007/066626 WO 20070614
- 主分类号： H02H9/00
- IPC分类号： H02H9/00
摘要：
A protection circuit according to the present invention includes: a diode (D1) having an anode thereof connected to a gate signal input terminal and a cathode thereof connected to the gate of an output transistor (N1); a resistor (R1) having one end thereof connected to the gate signal input terminal and the other end thereof connected to ground; a PNP bipolar transistor (Qp1) having the emitter, base and collector thereof connected to the gate of the output transistor (N1), the one end of the resistor (R1) and ground, respectively. With this configuration, it is possible to prevent, without the need for electric power, an open-drain output transistor from erroneously turning on as a result of an electrostatic pulse or the like being applied thereto, and thus to protect the output transistor from electrostatic breakdown.
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