发明授权
US07859097B2 Semiconductor device and method of fabricating semiconductor device
失效
半导体器件及半导体器件的制造方法
- 专利标题： Semiconductor device and method of fabricating semiconductor device
- 专利标题（中）： 半导体器件及半导体器件的制造方法
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申请号： US12285744申请日： 2008-10-14
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公开(公告)号： US07859097B2公开(公告)日： 2010-12-28
- 发明人: Kousaku Uoya
- 申请人： Kousaku Uoya
- 申请人地址： JP Kawasaki-shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi, Kanagawa
- 代理机构： McGinn Intellectual Property Law Group, PLLC
- 优先权： JP2007-271178 20071018
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L23/48
摘要：
A semiconductor device including a semiconductor chip having external connecting terminals formed on one side is restrained to cause chipping in ridge line portion of semiconductor chip. A cover layer 103 is formed on the other side of the semiconductor chip 102. At least a part of an end portion 106 of the cover layer is outside of the ridge line portion 107 of the semiconductor chip.
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