Invention Grant
US07858471B2 Methods of fabricating an access transistor for an integrated circuit device, methods of fabricating periphery transistors and access transistors, and methods of fabricating an access device comprising access transistors in an access circuitry region and peripheral transistors in a peripheral circuitry region spaced from the access circuitry region
有权
制造用于集成电路器件的存取晶体管的方法，制造外围晶体管和存取晶体管的方法以及制造接入器件的方法，所述接入器件包括接入电路区域中的存取晶体管和与所述接入电路区域间隔开的外围电路区域中的外围晶体管
- Patent Title: Methods of fabricating an access transistor for an integrated circuit device, methods of fabricating periphery transistors and access transistors, and methods of fabricating an access device comprising access transistors in an access circuitry region and peripheral transistors in a peripheral circuitry region spaced from the access circuitry region
- Patent Title (中): 制造用于集成电路器件的存取晶体管的方法，制造外围晶体管和存取晶体管的方法以及制造接入器件的方法，所述接入器件包括接入电路区域中的存取晶体管和与所述接入电路区域间隔开的外围电路区域中的外围晶体管
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Application No.: US11521329Application Date: 2006-09-13
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Publication No.: US07858471B2Publication Date: 2010-12-28
- Inventor: Gordon A. Haller , Sanh D. Tang
- Applicant: Gordon A. Haller , Sanh D. Tang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Fabrication methods for gate transistors in integrated circuit devices enable the formation of recessed access device structures or FinFET structures having P-type workfunctions. The fabrication methods also provide for the formation of access transistor gates of an access device following formation of the periphery transistor gates. Access devices and systems including same are also disclosed.
Public/Granted literature
- US20080064154A1 Process flow for metal gate access device Public/Granted day:2008-03-13
Information query
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