发明授权
US07851828B2 Phase change memory cell with transparent conducting oxide for electrode contact material
有权
具有透明导电氧化物的相变存储单元，用于电极接触材料
- 专利标题： Phase change memory cell with transparent conducting oxide for electrode contact material
- 专利标题（中）： 具有透明导电氧化物的相变存储单元，用于电极接触材料
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申请号： US11290712申请日： 2005-11-29
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公开(公告)号： US07851828B2公开(公告)日： 2010-12-14
- 发明人: Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Bum Kim
- 申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Bum Kim
- 申请人地址： KR Seoul KR Seoul
- 专利权人： Korea Institute of Science and Technology,Seoul National University Industry Foundation
- 当前专利权人： Korea Institute of Science and Technology,Seoul National University Industry Foundation
- 当前专利权人地址： KR Seoul KR Seoul
- 代理机构： Sughrue Mion, PLLC
- 优先权： KR10-2004-0098796 20041129
- 主分类号： H01L29/768
- IPC分类号： H01L29/768
摘要：
The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
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