A method for inspecting a plurality of dies, that are typically disposed on a surface of a semiconducting wafer. Each of the dies includes respective functional features within the die. The method consists of identifying within a first die a first multiplicity of the functional features having respective characteristics, and measuring respective first locations of the first multiplicity with respect to an origin of the first die. Within a group of second dies a second multiplicity of the functional features having the respective characteristics is identified, respective second locations of the second multiplicity are measured. The second locations are compared to the first locations to determine a location of an origin of the group of the second dies.